features ? tungsten/platinum schottky barrier ? oxide passivated structure for low leakage currents ? guard ring protection for increased reverse energy capability ? epitaxial structure minimizes forward voltage drop ? hermetically sealed, low profile ceramic surface mount power package ? very low thermal resistance and low package inductance ? available as reverse polarity, strap-to-cathode: msasc75w100fr (1N6820R) ? tx v-level (msasc75w100fv) or s-level (msasc75w100fs) screening i.a.w. microsemi internal procedure ps11.50 available msasc75w100f (1n6820) 100 volts 75 amps 2830 s. fairv i ew st. santa a n a, ca 92704 ph: (714) 979-8220 fa x: (714) 966-5256 low reverse leakage schottky diode dat a sheet # m s c 1031b description symbol max. unit peak repetitive reverse voltage v rrm 1 0 0 v o l t s working peak reverse voltage v rw m 1 0 0 v o l t s dc blocking voltage v r 1 0 0 v o l t s average rectified forward current, tc 125 c i f(av e) 7 5 a m p s derating, forward current, tc 125 c di f / d t 4 amps/ c nonrepetitive peak surge current, tp= 8.3 ms, half-sinewave i fsm 5 0 0 a m p s peak repetitive reverse surge current, tp= 1 s, f= 1khz i rrm 2 a m p junction temperature range t j -55 to +175 c storage temperature range t stg -55 to +175 c thermal resistance, junction to case: msasc75w100f msasc75w100fr jc 0.50 0.65 c/w mechanical outline thinkey ?4 maximum ratings @ 25 c (unless otherwise specified)
msasc75w100f ( 1n6820 ) electrical parameters 0. 000 0. 200 0. 400 0. 600 0. 800 1. 000 1. 200 1 1 0 100 1000 if ( a ) vf(v) -55c + 25c + 125c description symbol conditions min typ. max unit reverse (leakage) ir 25 vr= 100 vdc, tc= 25 dat a sheet # m s c 1031b
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